this new generation of trench mosfets from ty utilizes a unique structure that summary v (br)dss = -30v; r ds(on) = 0.21 i d = -1.6a description combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23 package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control device marking ? 313 ZXMP3A13F 30v p-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMP3A13Fta 7? 8mm 3000 units ZXMP3A13Ftc 13? 8mm 10000 units ordering information s o t 2 3 top view pinout 1 of 3 sales@zpsemi.com www.zpsemi.com
parameter symbol value unit junction to ambient (a) r ja 200 c/w junction to ambient (b) r ja 155 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. thermal resistance parameter symbol limit unit drain-source voltage v dss -30 v gate source voltage v gs 20 v continuous drain current v gs =10v; t a =25c (b) v gs =10v; t a =70c (b) v gs =10v; t a =25c (a) i d -1.6 -1.3 -1.4 a pulsed drain current (c) i dm -6 a continuous source current (body diode) (b) i s -1.2 a pulsed source current (body diode) (c) i sm -6 a power dissipation at t a =25c (a) linear derating factor p d 625 5 mw mw/c power dissipation at t a =25c (b) linear derating factor p d 806 6.4 mw mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings ZXMP3A13F 30v p-channel enhancement mode mosfet 2 of 3 sales@zpsemi.com www.zpsemi.com
parameter symbol min. typ. max. unit c onditions static drain-source breakdown voltage v (br)dss -30 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -0.5 av ds =-30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.210 0.330 v gs =-10v, i d =-1.4a v gs =-4.5v, i d =-1.1a forward transconductance (1)(3) g fs 2.4 s v ds =-15v,i d =-1.4a dynamic (3) input capacitance c iss 206 pf v ds =-15v, v gs =0v, f=1mhz output capacitance c oss 59.3 pf reverse transfer capacitance c rss 49.2 pf switching (2) (3) turn-on delay time t d(on) 1.5 ns v dd =-15v, i d =-1a r g =6.0 ,v gs =-10v rise time t r 3.0 ns turn-off delay time t d(off) 11.1 ns fall time t f 7.6 ns gate charge q g 3.8 nc v ds =-15v,v gs =-5v, i d =-1.4a total gate charge q g 6.4 nc v ds =-15v,v gs =-10v, i d =-1.4a gate-source charge q gs 0.69 nc gate-drain charge q gd 2.0 nc source-drain diode diode forward voltage (1) v sd -0.85 -0.95 v t j =25c, i s =-1.1a, v gs =0v reverse recovery time (3) t rr 15.6 ns t j =25c, i f =-0.95a, di/dt= 100a/ s reverse recovery charge (3) q rr 9.6 nc electrical characteristics (at t a = 25c unless otherwise stated) notes: (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing. ZXMP3A13F 30v p-channel enhancement mode mosfet 3 of 3 sales@zpsemi.com www.zpsemi.com
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